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MTD8N06E |
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| Part Number | MTD8N06E |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD8N06E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This a... |
| Features |
500 Unit Tape & Reel, Add T4 Suffix to Part Number
™
Data Sheet
MTD8N06E
TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM
®
D
G S
CASE 369A –13, Style 2 DPAK MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous Gate –Source Voltage — Non –Repetitive (tp ≤ 10 ms) Drain Current — Continuous — Continuous @ 100°C — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size Operating and Storage Temperatur... |
| Document |
 MTD8N06E Data Sheet
PDF 173.09KB |
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