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IRFB4110PBF |
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| Part Number | IRFB4110PBF |
| Manufacturer | International Rectifier |
| Title | HEXFET Power MOSFET |
| Features |
ower Dissipation
Linear Derating Factor
VGS dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited... |
| Document |
 IRFB4110PBF Data Sheet
PDF 326.95KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFB4110 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | IRFB4110 |
International Rectifier |
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| 3 | IRFB4110G |
INCHANGE |
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|
| 4 | IRFB4110GPbF |
International Rectifier |
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|
| 5 | IRFB4110QPBF |
International Rectifier |
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|
| 6 | IRFB4115 |
International Rectifier |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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