IS45S16100C1 Integrated Silicon Solution RAM, Hoja de datos, Ficha técnica, Distribuidor, Inventario y Mejor Precio

IS45S16100C1

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Part Number	IS45S16100C1
Manufacturer	Integrated Silicon Solution
Description	ISSI’s 16Mb Synchronous DRAM IS45S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture....
Features	• Clock frequency: 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11 (bank select) • Single 3.3V power supply • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst sequence: Sequential/Interleave • 4096 refresh cycles every 64 ms • Random column address every clock cycle • Programmable CAS latency (2, 3 clocks) • Burst read/write and burst read/single write operations capability • Burst termination by burst stop and precharge comm...
Document	IS45S16100C1 Data Sheet PDF 893.07KB

No.	Parte #	Fabricante	Descripción
1	IS45S16100E	Integrated Silicon Solution	512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
2	IS45S16100F	ISSI	512K Words x 16 Bits x 2 Banks 16Mb SDRAM
3	IS45S16100H	ISSI	16Mb SYNCHRONOUS DYNAMIC RAM
4	IS45S16160C	Integrated Silicon Solution	256 Mb Single Data Rate Synchronous DRAM
5	IS45S16160D	Integrated Silicon Solution	256-MBIT SYNCHRONOUS DRAM
6	IS45S16160G	ISSI	256Mb SYNCHRONOUS DRAM