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FQA19N20C |
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| Part Number | FQA19N20C |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• 21.8A, 200V, RDS(on) = 0.17Ω @VGS = 10 V • Low gate charge ( typical 40.5 nC) • Low Crss ( typical 85 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability G DS TO-3PN FQA Series D { G{ ● ◀▲ ● ● { S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (N... |
| Document |
 FQA19N20C Data Sheet
PDF 585.90KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQA19N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 2 | FQA19N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET |
|
| 3 | FQA19N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 4 | FQA10N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 5 | FQA10N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET |
|
| 6 | FQA10N80C |
Fairchild Semiconductor |
800V N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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