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IXTY1N80 |
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| Part Number | IXTY1N80 |
| Manufacturer | IXYS |
| Description | www.DataSheet4U.com High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data IXTA 1N80 IXTP 1N80 IXTY 1N80 VDSS ID25 RDS(on) = 800 V = 750 mA = 11 Ω Symbol VDSS VDGR... |
| Features |
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions
! International standard packages ! High voltage, Low RDS (on) HDMOSTM
process
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.5 4.5 ±100 TJ = 25°C TJ = 125°C 9.5 25 500 11 V V nA µA µA Ω
! Rugged polysilicon gate ! Fast switching times
Applications
cell structure
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 250 µA VDS = VGS, ID = 25 µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V
! Switch-mode
! ! DC choppers ! High frequency
Advantages
and resonant... |
| Document |
 IXTY1N80 Data Sheet
PDF 81.05KB |
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