HYB18T512161B2F-20 Qimonda AG SDRAM, Hoja de datos, Ficha técnica, Distribuidor, Inventario y Mejor Precio

HYB18T512161B2F-20

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Part Number	HYB18T512161B2F-20
Manufacturer	Qimonda AG
Description	All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK falling). ...
Features	The 512-Mbit Double-Data-Rate-Two SDRAM offers the following key features: • Data masks (DM) for write data • 1.8 V ± 0.1V VDD for [ –20/ –25] • 1.8 V ± 0.1V VDDQ for [ –20/ –25] • Posted CAS by programmable additive latency for better • DRAM organizations with 16 data in/outputs command and data bus efficiency • Double Data Rate architecture: • Off-Chip-Driver impedance adjustment (OCD) and On – two data transfers per clock cycle Die-Termination (ODT) for better signal quality. – four internal banks for concurrent operation • Auto-Precharge operation for read and write bursts • Programmable CAS L...
Document	HYB18T512161B2F-20 Data Sheet PDF 1.30MB

No.	Parte #	Fabricante	Descripción
1	HYB18T512161B2F-25	Qimonda AG	512-Mbit x16 DDR2 SDRAM
2	HYB18T512161BF	Qimonda AG	512-Mbit x16 DDR2 SDRAM
3	HYB18T512160A	Infineon Technologies AG	512-Mbit Double-Data-Rate-Two SDRAM
4	HYB18T512160AC-3.7	Infineon	512-Mbit Double-Data-Rate-Two SDRAM
5	HYB18T512160AC-5	Infineon	512-Mbit Double-Data-Rate-Two SDRAM
6	HYB18T512160AF	Infineon Technologies AG	512-Mbit DDR2 SDRAM