Busque con el número de pieza junto con el fabricante o la descripción
K7A161831B |
Click to view a larger image
| Part Number | K7A161831B |
| Manufacturer | Samsung semiconductor |
| Description | The K7A163631B and K7A161831B are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 512K(... |
| Features |
• Synchronous Operation. • 2 Stage Pipelined operation with 4 Burst. • On-Chip Address Counter. • Self-Timed Write Cycle. • On-Chip Address and Control Registers. • VDD= 2.5 or 3.3V +/- 5% Power Supply. • 5V Tolerant Inputs Except I/O Pins. • Byte Writable Function. • Global Write Enable Controls a full bus-width write. • Power Down State via ZZ Signal. • LBO Pin allows a choice of either a interleaved burst or a linear burst. • Three Chip Enables for simple depth expansion with No Data Contention ; 2cycle Enable, 2cycle Disable. • Asynchronous Output Enable Control. • ADSP, ADSC, ADV Burst Co... |
| Document |
 K7A161831B Data Sheet
PDF 405.57KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K7A161830B |
SAMSUNG ELECTRONICS |
512Kx36 & 1Mx18 Synchronous SRAM |
|
| 2 | K7A161800A |
Samsung semiconductor |
512K x 36 / x32 & 1M x 18 Synchronous SRAM |
|
| 3 | K7A161801A |
Samsung semiconductor |
512K x 36 / 32 & 1M x 18 Synchronous SRAM |
|
| 4 | K7A163200A |
Samsung semiconductor |
512K x 36 / x32 & 1M x 18 Synchronous SRAM |
|
| 5 | K7A163200A |
Samsung semiconductor |
512K x 36 / x32 & 1M x 18 Synchronous SRAM |
|
| 6 | K7A163201A |
Samsung semiconductor |
512K x 36 / 32 & 1M x 18 Synchronous SRAM |
|
Desde 2024. D4U Semiconductor.
|