APT200GN60J Advanced Power Technology Intergrated Gate Resistor: Low EMI High Reliability Datasheet. existencias, precio

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APT200GN60J

Advanced Power Technology
APT200GN60J
APT200GN60J APT200GN60J
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Part Number APT200GN60J
Manufacturer Advanced Power Technology
Description TYPICAL PERFORMANCE CURVES APT200GN60J APT200GN60J www.DataSheet4U.com 600V Utilizing the latest Field Stop and Trench Gate technologies, these IGBTs have ultra low VCE(ON) and are ideal for low fre...
Features or Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 All Ratings: TC = 25°C unless otherwise specified. APT200GN60J UNIT Volts 600 ±20 250 110 600 600A @600V 568 -55 to 150 Amps @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) Gate Threshold Voltage (VCE = VGE, I C = 3.2mA, Tj = 25°C) MIN TYP MAX UNIT 600 5 1.05 5....

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