HYB18T256160BFL |
Part Number | HYB18T256160BFL |
Manufacturer | Qimonda |
Description | All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK falling). ... |
Features |
The 256-Mbit Double-Data-Rate-Two SDRAM offers the following key features: • Off-Chip-Driver impedance adjustment (OCD) and • 1.8 V ± 0.1 V Power Supply 1.8 V ± 0.1 V (SSTL_18) compatible I/O On-Die-Termination (ODT) for better signal quality • DRAM organizations with 4, 8 and 16 data in/outputs • Auto-Precharge operation for read and write bursts • Double Data Rate architecture: two data transfers per • Auto-Refresh, Self-Refresh and power saving Powerclock cycle four internal banks for concurrent operation Down modes • Programmable CAS Latency: 3, 4, 5 and 6 • Average Refresh Period 7.8 μs ... |
Document |
HYB18T256160BFL Data Sheet
PDF 4.11MB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | HYB18T256160BF |
Qimonda |
256-Mbit Double-Data-Rate-Two SDRAM | |
2 | HYB18T256160BC |
Qimonda |
256-Mbit Double-Data-Rate-Two SDRAM | |
3 | HYB18T256160BCL |
Qimonda |
256-Mbit Double-Data-Rate-Two SDRAM | |
4 | HYB18T256160A |
Infineon Technologies AG |
256 Mbi t DDR2 SDRAM | |
5 | HYB18T256160AF |
Infineon Technologies AG |
256 Mbit DDR2 SDRAM | |
6 | HYB18T256161AF-22 |
Infineon |
256-Mbit x16 GDDR2 DRAM |