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IXFH60N20F |
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| Part Number | IXFH60N20F |
| Manufacturer | IXYS Corporation |
| Description | Advance Technical Information www.DataSheet4U.com HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFH 6... |
| Features |
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1.13/10 Nm/lb.in. 6 4 g g
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RF capable MOSFETs Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier
Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2.0 V 4.0 V ±100 nA TJ = 125°C 50 µA 1.5 mA 38 m Ω
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VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1mA VDS = VGS, ID = 4mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1
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DC-DC converters Switched-mode and resona... |
| Document |
 IXFH60N20F Data Sheet
PDF 124.97KB |
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