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IXFN106N20 |
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| Part Number | IXFN106N20 |
| Manufacturer | IXYS Corporation |
| Description | www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS IXFK 90 N 20 IXFN 100 N 20 IXFN 106 N 20 ID25 RDS(on) 23 mW... |
| Features |
International standard packages JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier
l q q q q q q q
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2 4 ±200 TJ = 25°C TJ = 125°C IXFK90N20 IXFN100N20 IXFN106N20 400 2 0.023 0.023 0.020 V V nA mA mA W W W
VDSS VGH(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1 mA VDS = VGS, ID = 8 m... |
| Document |
 IXFN106N20 Data Sheet
PDF 135.56KB |
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Desde 2024. D4U Semiconductor.
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