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IXTK120N25 |
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| Part Number | IXTK120N25 |
| Manufacturer | IXYS Corporation |
| Description | High Current MegaMOSTMFET N-Channel Enhancement Mode Preliminary Data Sheet IXTK 120N25 VDSS = ID25 = = RDS(on) 250 V 120 A 20 mΩ Symbol Test conditions VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR... |
| Features |
•Low RDS (on) HDMOSTM process •Rugged polysilicon gate cell structure •International standard package •Fast switching times Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS = 0 V, ID = 1 mA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ±20 V DC, VDS = 0 IDSS VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C RDS(on) VPuGSlse=te1s0t,Vt,≤ID3=000.m5 sID,2d5 uty cycle d ≤ 2% Characteristic Values Min. Typ. Max. 250 V 2.0 4.0 V ±200 nA 50 µA 3 mA 20 mΩ Applications • Motorcontrols • DC choppers • Switched-mode power supplies Advantages • Easy to mount with one screw ... |
| Document |
 IXTK120N25 Data Sheet
PDF 574.21KB |
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Desde 2024. D4U Semiconductor.
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