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IXTK102N30P |
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| Part Number | IXTK102N30P |
| Manufacturer | IXYS Corporation |
| Description | www.DataSheet4U.com PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTK 102N30P VDSS = 300 V ID25 = 102 A RDS(on) ≤ 33 mΩ Symbol VDSS VDGR VGSS VGSM ID25 ID(RMS) IDM IAR EAR EAS... |
| Features |
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International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque TO-264
300 °C 260 °C 1.13/10 Nm/lb.in. 10 g
Advantages
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Easy to mount Space savings High power density
Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 500µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125° C
Characteristic Values Min. Typ. Max. 300 2.5 5.0 ±200 25 250 33 V V nA µA µA m... |
| Document |
 IXTK102N30P Data Sheet
PDF 245.69KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | IXTK102N30P |
INCHANGE |
N-Channel MOSFET |
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| 2 | IXTK102N65X2 |
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| 3 | IXTK100N25P |
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| 4 | IXTK110N20L2 |
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| 6 | IXTK120N20P |
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Desde 2024. D4U Semiconductor.
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