TC59LM906AMG-37 Toshiba Semiconductor MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Datasheet. existencias, precio

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TC59LM906AMG-37

Toshiba Semiconductor
TC59LM906AMG-37
TC59LM906AMG-37 TC59LM906AMG-37
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Part Number TC59LM906AMG-37
Manufacturer Toshiba (https://www.toshiba.com/) Semiconductor
Description Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM914/06AMG is Fast Cycle Random Access Memory (Network FCRAMTM) containing 536,870,912 memory cells. TC59LM914AMG is organized...
Features PARAMETER CL = 3 tCK Clock Cycle Time (min) CL = 4 CL = 5 tRC Random Read/Write Cycle Time (min) tRAC Random Access Time (max) IDD1S Operating Current (single bank) (max) lDD2P Power Down Current (max) lDD6 Self-Refresh Current (max) TC59LM914/06 -37 5.5 ns 4.5 ns 3.75 ns 22.5 ns 22.0 ns 280 mA 90 mA 20 mA -50 6.0 ns 5.5 ns 5.0 ns 27.5 ns 24.0 ns 240 mA 80 mA 20 mA















• Fully Synchronous Operation
• Double Data Rate (DDR) Data input/output are synchronized with both edges of DQS.
• Differential Clock (CLK and CLK ) inputs CS , FN and all address input signals a...

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