55GN01S |
Part Number | 55GN01S |
Manufacturer | Sanyo Semicon Device |
Description | Ordering number : ENN7687 55GN01S www.DataSheet4U.com NPN Epitaxial Planar Silicon Transistor 55GN01S Features • • • UHF Wide-band Low-noise Amplifier Applications High cutoff frequency : fT= 5.5... |
Features |
• • • UHF Wide-band Low-noise Amplifier Applications High cutoff frequency : fT= 5.5GHz typ. High gain : S21e2=10dB typ (f=1GHz). Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 20 10 3 70 100 150 --55 to +150 Unit V V V mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Cur... |
Document |
55GN01S Data Sheet
PDF 57.95KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 55GN01C |
Sanyo Semicon Device |
UHF Wide-band Low-noise Amplifier Applications | |
2 | 55GN01CA |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor | |
3 | 55GN01CA |
ON Semiconductor |
RF Transistor | |
4 | 55GN01FA |
Sanyo Semicon Device |
UHF Wide-band Low-noise Amplifier Applications | |
5 | 55GN01FA |
ON Semiconductor |
RF Transistor | |
6 | 55GN01M |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise Amplifier Applications |