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STP11NM60ND |
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| Part Number | STP11NM60ND |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | S(3) This FDmesh II Power MOSFET with fast-recovery body diode is produced using AM01475v1_noZen MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-... |
| Features |
TAB
TO-220
1 23
D(2, TAB)
Order code
VDS at TJ max.
RDS(on) max.
ID
STP11NM60ND
650 V
450 mΩ
10 A
• Fast-recovery body diode • Low gate charge and input capacitance • Low on-resistance RDS(on) • 100% avalanche tested • High dv/dt ruggedness Applications • Switching applications G(1) Description S(3) This FDmesh II Power MOSFET with fast-recovery body diode is produced using AM01475v1_noZen MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies an... |
| Document |
 STP11NM60ND Data Sheet
PDF 619.08KB |
Similar Datasheet
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| 1 | STP11NM60N |
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| 2 | STP11NM60N |
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Desde 2024. D4U Semiconductor.
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