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TPC6104 |
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| Part Number | TPC6104 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TPC6104 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC6104 Notebook PC Applications Portable Equipment Applications • • • • Low drain-source ON resistan... |
| Features |
g (typ.)
Circuit Configuration
6 5 4
Thermal Characteristics
Characteristics Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 56.8 178.5 Unit °C/W °C/W 1 2 3
Note: Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2004-07-06
TPC6104
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS... |
| Document |
 TPC6104 Data Sheet
PDF 229.97KB |
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