MTB06N03H8 |
Part Number | MTB06N03H8 |
Manufacturer | Cystech Electonics |
Description | BVDSS ID RDSON(max) 30V 75A 6.5mΩ The MTB06N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resista... |
Features |
• Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • Pb-free lead plating and Halogen-free package Symbol MTB06N03H8 Outline Power pak Pin 1 G:Gate D:Drain S:Source MTB06N03H8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Symbol www.DataSheet4U.com Spec. No. : C710H8 Issued Date : 2009.05.07 Revised Date : Page No. : 2/6 Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Dr... |
Document |
MTB06N03H8 Data Sheet
PDF 333.21KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MTB06N03E3 |
CYStech |
N-Channel Enhancement Mode Power MOSFET | |
2 | MTB06N03J3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
3 | MTB06N03Q8 |
Cystech Electonics |
N-Channel Logic Level Enhancement Mode Power MOSFET | |
4 | MTB060N06I3 |
CYStech |
N-Channel Enhancement Mode Power MOSFET | |
5 | MTB060N15J3 |
CYStech |
N-Channel Enhancement Mode Power MOSFET | |
6 | MTB060P06I3 |
CYStech |
P-Channel Enhancement Mode Power MOSFET |