SSF6807 |
Part Number | SSF6807 |
Manufacturer | SilikrON Semiconductor (https://www.onsemi.com/) Co |
Description | The SSF6807 is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatabi... |
Features |
ltage Operating Junction and Storage Temperature Range Max. 84 76 310 150 1.5 ±20 400 TBD 31 –55 to +150 W W/ ْC V mJ mJ v/ns ْC A Units Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter BVDSS VGS(th) IDSS Drain-to-Source breakdown voltage Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Gate-to-Source reverse leakage RDS(on) Static Drain-to-Source on-resistance Min. 60 — 2.0 — — — — 2009.7.10 Typ. — — — — — — Max. Units — 4.0 2 10 100 -100 V Ω V Test Conditions VGS=0V,ID=250μA VGS=10V,ID=30A VDS=VGS,ID=250μA VDS=60V,VGS=0V 0.0... |
Document |
SSF6807 Data Sheet
PDF 357.23KB |
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