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TSM2N70 |
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| Part Number | TSM2N70 |
| Manufacturer | Taiwan Semiconductor Company |
| Description | The TSM2N7000 is produced using high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance. It ... |
| Features |
High density cell design for low on-resistance Voltage control small signal switch Rugged and reliable High saturation current capability Provide in TO-92 package
Ordering Information
Part No. TSM2N7000CT A3 TSM2N7000CT B0 Packing Ammo pack Bulk pack Package TO-92
Block Diagram
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage --- Continuous --- Pulsed Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Ta = 25 C Ta > 25 C Operating Junction Temperature Operating Junction and Storage... |
| Document |
 TSM2N70 Data Sheet
PDF 144.39KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TSM2N7000 |
Taiwan Semiconductor Company |
60V N-Channel Enhancement Mode MOSFET |
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| 2 | TSM2N7000K |
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| 3 | TSM2N7002 |
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| 4 | TSM2N7002E |
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| 5 | TSM2N7002K |
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60V N-Channel MOSFET |
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| 6 | TSM2N7002KD |
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60V N-Channel MOSFET |
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Desde 2024. D4U Semiconductor.
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