STPSC1006D |
Part Number | STPSC1006D |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 6... |
Features |
■ ■ ■ No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function A K Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. ST SiC diodes will boost the performance of PFC operations... |
Document |
STPSC1006D Data Sheet
PDF 114.40KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | STPSC1006 |
ST Microelectronics |
Schottky silicon carbide diode | |
2 | STPSC10065 |
STMicroelectronics |
Schottky silicon carbide diode | |
3 | STPSC10065DLF |
STMicroelectronics |
power Schottky silicon carbide diode | |
4 | STPSC10H065 |
STMicroelectronics |
power Schottky silicon carbide diode | |
5 | STPSC10H065-Y |
STMicroelectronics |
Automotive 650V power Schottky silicon carbide diode | |
6 | STPSC10H065BY-TR |
STMicroelectronics |
Schottky silicon carbide diode |