FDS4435BZ Fairchild Semiconductor P-Channel PowerTrench MOSFET Datasheet. existencias, precio

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FDS4435BZ

Fairchild Semiconductor
FDS4435BZ
FDS4435BZ FDS4435BZ
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Part Number FDS4435BZ
Manufacturer Fairchild Semiconductor
Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Po...
Features „ Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A „ Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A „ Extended VGSS range (-25V) for battery applications „ HBM ESD protection level of ±3.8KV typical (note 3) „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ Termination is Lead-free and RoHS compliant April 2009 General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Managem...

Document Datasheet FDS4435BZ Data Sheet
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