NTD10 |
Part Number | NTD10 |
Manufacturer | EDI |
Description | NTD HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE Peak EDI Type No. Reverse V oltage PRV (V olts) Avg. Fwd.... |
Features |
s AMBIENT TEMPERATURE
% RATED FWD CURRENT
100
75
50
25
0 0 25 50 75 100
(OC)
125
150
AMBIENT TEMPERATURE
FIG.2
NON-REPETITIVE SURGE CURRENT RATINGS
0.1SEC 100 1.0SEC
% MAXIMUM SURGE
75
50
25
www.DataSheet4U.com
0 1 2 3 4 5 6 7 8 9 10 20 30 40 50 60
CYCLES(60 Hz)
FIG.3
PACKAGE STYLE
.030 .033
DIA.
_ .02 L +
1.00 MIN.
.51 MAX. DIA.
ALL DIMENSIONS IN INCHES Maximum lead and terminal temperature for soldering,3/8 inch form case, 5 seconds at 250 O C EDI reserves the right to change these specifications at any time whthout notice.
ELECTRONIC DEVICES, INC. DESIGNERS AND MANUFA... |
Document |
NTD10 Data Sheet
PDF 64.84KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | NTD106B |
Naina Semiconductor |
Thyristor/Diode Module | |
2 | NTD110N02R |
ON |
Power MOSFET | |
3 | NTD12 |
EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS | |
4 | NTD122C |
Naina Semiconductor |
Thyristor/Diode Module | |
5 | NTD12N10 |
ON Semiconductor |
Power MOSFET | |
6 | NTD132C |
Naina Semiconductor |
Thyristor/Diode Module |