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TPC8009-H |
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| Part Number | TPC8009-H |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TPC8009-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) TPC8009-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applic... |
| Features |
p.)
1.0
W
Circuit Configuration
219 13 0.19 150 -55 to 150 mJ A mJ °C °C 1 2 3 4 8 7 6 5
(Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range
EAR Tch Tstg
Note: (Note 1), (Note 2), (Note 3), (Note 4) Please see next page. This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-01-17
TPC8009-H
Thermal Characteristics
Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-a) Max 65.8 Unit °C/W
Thermal resistance, channel to ambient (t = 10 s) (Note 2b)... |
| Document |
 TPC8009-H Data Sheet
PDF 216.31KB |
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