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1N3297 |
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| Part Number | 1N3297 |
| Manufacturer | NAINA SEMICONDUCTOR |
| Description | 1N3288-1N3297 SILICON POWER DIODE DO - 8 FEATURES • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V F... |
| Features |
• Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1250C Maximum peak forward voltage drop @ Rated IF(AV) Maximum peak one cycle (non-rep) surge current 10 m sec Maximum peak repetitive surge current Maximum I2t rating (non-rep.) for 5 to 10 msec. 100A 1.5V 2200A 500 A 24000 A2 Sec NAINA THERMAL MECHANICAL SPECIFICATIONS θ JC Tj Tstg W www.DataSheet4U.com Maximum thermal resistance Junction to case Operating Junction Temp. Storage temperatur... |
| Document |
 1N3297 Data Sheet
PDF 109.67KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 1N3290 |
Microsemi Corporation |
SILICON POWER RECTIFIER |
|
| 2 | 1N3290 |
NAINA SEMICONDUCTOR |
(1N3288 - 1N3297) SILICON POWER DIODE |
|
| 3 | 1N3290 |
Digitron Semiconductors |
HIGH POWER RECTIFIERS |
|
| 4 | 1N3290 |
TRANSYS |
High Current Rectifier |
|
| 5 | 1N3290 |
International Rectifier |
Silicon Rectifier Diode |
|
| 6 | 1N3290A |
International Rectifier |
Silicon Rectifier Diode |
|
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