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K4M56323PG-C |
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| Part Number | K4M56323PG-C |
| Manufacturer | Samsung semiconductor |
| Description | The K4M56323PG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design al... |
| Features |
• 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) -. DS (Driver Strength) -. DPD (Deep Power Down) • DQM for masking. • Auto refresh. ... |
| Document |
 K4M56323PG-C Data Sheet
PDF 184.11KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K4M56323PG-F |
Samsung semiconductor |
2M x 32Bit x 4 Banks Mobile SDRAM |
|
| 2 | K4M56323PG-FE |
Samsung semiconductor |
2M x 32Bit x 4 Banks Mobile SDRAM |
|
| 3 | K4M56323PG-G |
Samsung semiconductor |
2M x 32Bit x 4 Banks Mobile SDRAM |
|
| 4 | K4M563233D |
Samsung |
8Mx32 Mobile SDRAM 90FBGA |
|
| 5 | K4M563233E |
Samsung semiconductor |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
|
| 6 | K4M563233G |
Samsung semiconductor |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
|
Desde 2024. D4U Semiconductor.
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