C5803 Inchange Semiconductor 2SC5803 Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

C5803

Inchange Semiconductor
C5803
C5803 C5803
zoom Click to view a larger image
Part Number C5803
Manufacturer Inchange Semiconductor
Description ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for high voltage color display horizontal deflection output applications. ABSOLUT...
Features IC= 8A; IB= 2A B 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 2A B 1.5 V ICES Collector Cutoff Current VCE= 1400V; VBE= 0 1.0 mA ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain Switching Times tstg Storage Time www.DataSheet4U.com tf Fall Time w . w w IC= 8A; VCE= 5V n c . i m e s c is 15 5.5 1.0 mA 40 8.5 4.0 μs IC= 7A, IB1= 1.4A; IB2= -2.8A; VCC= 200V; RL= 28.6Ω 0.3 μs isc Website:www.iscsemi.cn 2 ...

Document Datasheet C5803 Data Sheet
PDF 245.74KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 C580
Z-Communications
VCO Model Datasheet
2 C5800
Renesas
NPN SILICON RF TRANSISTOR Datasheet
3 C5801
NEC
2SC5801 Datasheet
4 C5802
SavantIC
Silicon NPN Power Transistor Datasheet
5 C5802D
Fairchild Semiconductor
KSC5802D Datasheet
6 C5803
KEC
KSC5803 Datasheet
More datasheet from Inchange Semiconductor
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad