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FDFMA2P859T |
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| Part Number | FDFMA2P859T |
| Manufacturer | Fairchild Semiconductor |
| Description | This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resist... |
| Features |
MOSFET:
Max rDS(on) = 120 m: at VGS = –4.5 V, ID = –3.0 A Max rDS(on) = 160 m: at VGS = –2.5 V, ID = –2.5 A Max rDS(on) = 240 m: at VGS = –1.8 V, ID = –1.0 A July 2009 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses. The MicroFET 2x2 Thin package offers excep... |
| Document |
 FDFMA2P859T Data Sheet
PDF 326.47KB |
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Desde 2024. D4U Semiconductor.
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