Busque con el número de pieza junto con el fabricante o la descripción
HYB18T512160BF |
Click to view a larger image
| Part Number | HYB18T512160BF |
| Manufacturer | Qimonda |
| Description | latched at the cross point of differential clocks (CK rising and CK falling). All I/Os are synchronized with a single ended DQS or differential DQS-DQS pair in a source synchronous fashion. A 16-bit a... |
| Features |
The 512-Mbit Double-Data-Rate-Two SDRAM offers the following key features: • Off-Chip-Driver impedance adjustment (OCD) and On • 1.8 V ± 0.1 V Power Supply 1.8 V ± 0.1 V (SSTL_18) compatible I/O Die-Termination (ODT) for better signal quality • DRAM organizations with 4 and 8 data in/outputs • Auto-Precharge operation for read and write bursts • Double-Data-Rate-Two architecture: two data transfers • Auto-Refresh, Self-Refresh and power saving Powerper clock cycle four internal banks for concurrent operation Down modes • Programmable CAS Latency: 3, 4, 5 and 6 • Average Refresh Period 7.8 µs a... |
| Document |
 HYB18T512160BF Data Sheet
PDF 3.73MB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | HYB18T512160B |
Qimonda |
512-Mbit Double-Data-Rate-Two SDRAM |
|
| 2 | HYB18T512160BC |
Qimonda |
512-Mbit Double-Data-Rate-Two SDRAM |
|
| 3 | HYB18T512160A |
Infineon Technologies AG |
512-Mbit Double-Data-Rate-Two SDRAM |
|
| 4 | HYB18T512160AC-3.7 |
Infineon |
512-Mbit Double-Data-Rate-Two SDRAM |
|
| 5 | HYB18T512160AC-5 |
Infineon |
512-Mbit Double-Data-Rate-Two SDRAM |
|
| 6 | HYB18T512160AF |
Infineon Technologies AG |
512-Mbit DDR2 SDRAM |
|
Desde 2024. D4U Semiconductor.
|