STS2601 |
Part Number | STS2601 |
Manufacturer | SamHop Microelectronics |
Description | STS2601 S a mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -20V FEATURES Super high dense cell design for low R DS(ON). Rugged and rel... |
Features |
Super high dense cell design for low R DS(ON). Rugged and reliable. SOT-26 package.
ID
-4.0A
R DS(ON) (m Ω) Max
80 @ VGS=-4.5V 110 @ VGS=-2.5V
SOT 26 Top View
D
D D G
1 2 3
6 5 4
D D S
S G
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage
a
ID www.DataSheet4U.com Drain Current-Continuous IDM PD TJ, TSTG -Pulsed
b
TA=25°C TA=70°C TA=25°C TA=70°C
Limit -20 ±12 -4.0 -3.2 -16 2 1.28 -55 to 150
Units V V A A A W W °C
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
THERMAL CHAR... |
Document |
STS2601 Data Sheet
PDF 186.60KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | STS2611 |
SamHop Microelectronics |
P-Channel E nhancement Mode Field Effect Transistor | |
2 | STS2620 |
SamHop Microelectronics |
Dual Enhancement Mode Field Effect Transistor | |
3 | STS2620A |
SamHop |
Dual Enhancement Mode Field Effect Transistor | |
4 | STS2621 |
SamHop Microelectronics |
Dual P -Channel Enhancement Mode Field Effect Transistor | |
5 | STS2622 |
SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
6 | STS2622A |
SamHop Microelectronics |
Dual N-Channel MOSFET |