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IRFM220A |
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| Part Number | IRFM220A |
| Manufacturer | Fairchild Semiconductor |
| Description | Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @... |
| Features |
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.626 Ω (Typ.)
IRFM220A
BVDSS = 200 V RDS(on) = 0.8 Ω ID = 1.13 A
SOT-223
2 1 3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt
www.DataSheet4U.com
Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25 oC ) Continuous Drain Current (TA=70 Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetit... |
| Document |
 IRFM220A Data Sheet
PDF 310.97KB |
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Desde 2024. D4U Semiconductor.
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