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WFU2N60 |
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| Part Number | WFU2N60 |
| Manufacturer | Wisdom technologies |
| Description | This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche ... |
| Features |
■ ■ ■ ■ ■ RDS(on) (Max 5.0 Ω )@VGS=10V Gate Charge (Typical 9.5nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2. Drain ● 1. Gate { ▲ ● ● { 3. Source General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ba... |
| Document |
 WFU2N60 Data Sheet
PDF 751.05KB |
Desde 2024. D4U Semiconductor.
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