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FDB12N50U |
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| Part Number | FDB12N50U |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to mini... |
| Features |
• RDS(on) = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A • Low gate charge ( Typ. 21nC) • Low Crss ( Typ. 11pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant Ultra FRFET tm TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi... |
| Document |
 FDB12N50U Data Sheet
PDF 674.54KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDB12N50F |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FDB12N50F |
ON Semiconductor |
N-Channel MOSFET |
|
| 3 | FDB12N50TM |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 4 | FDB120N10 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | FDB120N10 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 6 | FDB101 |
Galaxy Semi-Conductor |
SILICON BRIDGE RECTIFIERS |
|
Desde 2024. D4U Semiconductor.
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