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AS4DDR32M16 |
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| Part Number | AS4DDR32M16 |
| Manufacturer | Austin Semiconductor |
| Description | The 512Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM. The 512Mb DDR SDRAM uses a double data rate archite... |
| Features |
• VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/received with data, i.e., source-synchronous data capture (has two – one per byte) • Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle • Differential clock inputs (CK and CK#) • Commands entered on each positive CK edge • DQS edge-aligned with data for READs; center-aligned with data for WRITEs • DLL to align DQ and DQS transitions with CK • Four internal banks for concurrent operation • Data mask (DM) for masking write data (has two –one per byte) • Programmable burst ... |
| Document |
 AS4DDR32M16 Data Sheet
PDF 7.57MB |
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Desde 2024. D4U Semiconductor.
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