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2SD961 |
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| Part Number | 2SD961 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 4A ·Complement to Type 2SB869 ·Minimum Lot-to-Lot variatio... |
| Features |
IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 0.2A
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.1A; VCE= 2V
hFE-2
DC Current Gain
IC= 0.5A; VCE= 2V
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V
Switching Times
ton
Turn-On Time
ts
Storage Time
IC= 2A; IB1= IB2= 0.2A
tf
Fall Time
hFE-2 Classifications R Q P 60-120 90-180 130-260 MIN TYP. MAX UNIT 80 V 0.5 V 1.5 V 10 μA 50 μA 45 60 260 30... |
| Document |
 2SD961 Data Sheet
PDF 214.52KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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