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2SD2112 |
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| Part Number | 2SD2112 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 1000(Min) @ IC= 3A, VCE= 3V ·Minimum Lot-t... |
| Features |
ied
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 60mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 3A; IB= 6mA
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 6A; IB= 60mA
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
ICEO
Collector Cutoff Current
VCE= 100V; RBE= ∞
hFE
DC Current Gain
IC= 3... |
| Document |
 2SD2112 Data Sheet
PDF 197.50KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | 2SD211 |
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| 2 | 2SD211 |
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