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2SD2110 |
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| Part Number | 2SD2110 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A ·High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 3V ·Minimum Lot-to... |
| Features |
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 4mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 2A; IB= 4mA
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 4A; IB= 40mA
ICBO
Collector Cutoff Current
VCB= 65V; IE= 0
ICEO
Collector Cutoff Current
VCE= 65V; RBE= ∞
hFE
DC Current Gain
IC= 2A; VCE... |
| Document |
 2SD2110 Data Sheet
PDF 198.39KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD211 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SD211 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SD2111 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SD2111 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SD2112 |
Inchange Semiconductor |
Power Transistor |
|
| 6 | 2SD2113 |
Inchange Semiconductor |
Power Transistor |
|
Desde 2024. D4U Semiconductor.
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