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2SD2027 |
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| Part Number | 2SD2027 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1346 ·Minimum Lot-to-Lot variations for robust device performance ... |
| Features |
Breakdown Voltage IC= 5mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(on) Base-Emitter On Voltage
IC= 0.5A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 40V; IE=0
IEBO
Emitter Cutoff Current
VEB= 4V; IC=0
hFE-1
DC Current Gain
IC= 0.5A; VCE= 5V
hFE-2
DC Current Gain
IC= 3A ; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V, f= 1MHz
fT
Current-Gain—Bandwidth Product
IC= 0.5A ; VCE= 5V
2SD2027
MIN TYP. MAX UNIT
60
V
60
V
6
V
... |
| Document |
 2SD2027 Data Sheet
PDF 209.36KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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