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2SD1576 |
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| Part Number | 2SD1576 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1300V (Min.) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ... |
| Features |
YMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 1A
5.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 1A
1.5
V
V(BR)EBO Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
hFE
DC Current Gain
IE= 1mA; IC= 0
VCB= 750V; IE= 0 VCB= 1300V; IE= 0
IC= 2A; VCE= 5V
6
V
50 μA 1.0 mA
2
fT
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V; ftest= 0.5MHz
2
MHz
Switching times
tstg
Storage Time
tf
Fall Time
IC= 2.5A , IB= 1.1A; LB= 10μH
9.0 μs 1.0 μs
NOTICE： ISC reserves the rights to make changes of the... |
| Document |
 2SD1576 Data Sheet
PDF 209.61KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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