1N5804US |
Part Number | 1N5804US |
Manufacturer | Semtech Corporation |
Description | Quick reference data VR 50 -150 V IF 1N5802US to 1N5806US = 2.5A trr 1N5802US to 1N5806US = 25nS IR 1N5802US to 1N5806US = 1µA Features Very low reverse recovery time Hermetically sealed non-... |
Features |
Very low reverse recovery time Hermetically sealed non-cavity construction Soft, non-snap, off recovery characteristics Very low forward voltage drop
These products are qualified to MIL-PRF-19500/477 and are preferred parts as listed in MIL-HDBK-5961. They can be supplied fully released as JANTX and JANTXV versions.
Electrical Specifications
Electrical specifications @ TA = 25°C unless otherwise specified.
Symbol Working Reverse Voltage Repetitive Reverse Voltage Average Forward Current (@ 75°C lead length = 0.375') Repetitive Surge Current (@ 55°C lead length = 0.375') Non-Repetiti... |
Document |
1N5804US Data Sheet
PDF 140.25KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 1N5804US |
Microsemi Corporation |
(1N5802US - 1N5806US) SURFACE MOUNT VOIDLESSHERMETICALLY- SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS | |
2 | 1N5804US |
MA-COM |
Rectifier Diode | |
3 | 1N5804US |
Sensitron |
Ultrafast Recovery Rectifiers | |
4 | 1N5804 |
DSI |
DIODE | |
5 | 1N5804 |
Microsemi |
VOIDLESS HERMETICALLY SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS | |
6 | 1N5804 |
Semtech |
RECTIFIER DIODE |