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1N5802US |
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| Part Number | 1N5802US |
| Manufacturer | Semtech Corporation |
| Description | Quick reference data VR 50 -150 V IF 1N5802US to 1N5806US = 2.5A trr 1N5802US to 1N5806US = 25nS IR 1N5802US to 1N5806US = 1µA Features Very low reverse recovery time Hermetically sealed non-... |
| Features |
Very low reverse recovery time Hermetically sealed non-cavity construction Soft, non-snap, off recovery characteristics Very low forward voltage drop
These products are qualified to MIL-PRF-19500/477 and are preferred parts as listed in MIL-HDBK-5961. They can be supplied fully released as JANTX and JANTXV versions.
Electrical Specifications
Electrical specifications @ TA = 25°C unless otherwise specified.
Symbol Working Reverse Voltage Repetitive Reverse Voltage Average Forward Current (@ 75°C lead length = 0.375') Repetitive Surge Current (@ 55°C lead length = 0.375') Non-Repetiti... |
| Document |
 1N5802US Data Sheet
PDF 140.25KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 1N5802US |
Microsemi Corporation |
(1N5802US - 1N5806US) SURFACE MOUNT VOIDLESSHERMETICALLY- SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS |
|
| 2 | 1N5802US |
MA-COM |
Rectifier Diode |
|
| 3 | 1N5802US |
Sensitron |
Ultrafast Recovery Rectifiers |
|
| 4 | 1N5802 |
Microsemi |
VOIDLESS HERMETICALLY SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS |
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| 5 | 1N5802 |
Semtech |
RECTIFIER DIODE |
|
| 6 | 1N5802 |
EIC |
GLASS PASSIVATED JUNCTION ULTRA FAST RECTIFIERS |
|
Desde 2024. D4U Semiconductor.
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