TC55V4000ST-85 |
Part Number | TC55V4000ST-85 |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | The TC55V4000ST is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a... |
Features |
• • • • • • Low-power dissipation Operating: 10.8 mW/MHz (typical) Single power supply voltage of 2.3 to 3.6 V Power down features using CE Data retention supply voltage of 1.5 to 3.6 V Direct TTL compatibility for all inputs and outputs Standby Current (maximum): 3.6 V 3.0 V 7 µA 5 µA • Access Times (maximum): TC55V4000ST -70 Access Time CE Access Time OE Access Time -85 85 ns 85 ns 45 ns 70 ns 70 ns 35 ns • Package: TSOP 32-P-0.50 (ST) (Weight: 0.24 g typ) PIN ASSIGNMENT (TOP VIEW) 32 PIN TSOP 16 1 PIN NAMES A0~A18 R/W OE CE Address Inputs Read/Write Control Output Enable Chip Enab... |
Document |
TC55V4000ST-85 Data Sheet
PDF 199.41KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | TC55V4000ST-70 |
Toshiba Semiconductor |
8-BIT STATIC RAM | |
2 | TC55V400AFT-55 |
Toshiba Semiconductor |
16-BIT FULL CMOS STATIC RAM | |
3 | TC55V400AFT-70 |
Toshiba Semiconductor |
16-BIT FULL CMOS STATIC RAM | |
4 | TC55V4326FF-133 |
Toshiba Semiconductor |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | |
5 | TC55V4326FF-150 |
Toshiba Semiconductor |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | |
6 | TC55V4326FF-167 |
Toshiba Semiconductor |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |