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STU10NM60N |
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| Part Number | STU10NM60N |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | AM01475v1_noZen This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s ... |
| Features |
TAB
Order code
VDS
RDS(on) max.
ID
STU10NM60N
600 V
550 mΩ
10 A
3
2 1
• 100% avalanche tested • Low input capacitance and gate charge IPAK • Low gate input resistance D(2, TAB) Applications • Switching applications G(1) S(3) Description AM01475v1_noZen This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency c... |
| Document |
 STU10NM60N Data Sheet
PDF 489.94KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | STU10NM60N |
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| 2 | STU10NM65N |
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