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BUK9MPP-55PRR |
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| Part Number | BUK9MPP-55PRR |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance (HPA) TrenchPLUS technology, featuring very low on-state resistance, integrated... |
| Features |
Integrated current sensor Integrated temperature sensor
1.3 Applications
Lamp switching Motor drive systems Power distribution Solenoid drivers
1.4 Quick reference data
Table 1. Quick reference Conditions VGS = 5 V; ID = 5 A; Tj = 25 °C; see Figure 16; see Figure 17 Tj = 25 °C; VGS = 5 V; see Figure 18 Tj = 25 °C; VGS = 0 V; ID = 250 µA Min Typ 21.3 Max 25 Unit mΩ Symbol Parameter RDSon drain-source on-state resistance ratio of drain current to sense current
Static characteristics, FET1 and FET2
ID/Isense
5130 55
5700 -
6270 -
A/A V
V(BR)DSS drain-source breakdown voltage
... |
| Document |
 BUK9MPP-55PRR Data Sheet
PDF 291.63KB |
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Desde 2024. D4U Semiconductor.
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