SSM3J108TU |
Part Number | SSM3J108TU |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | SSM3J108TU www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J108TU High Speed Switching Applications • • 1.8V drive Low on-resistance: Ron = 363mΩ (max) (@VGS = −1.... |
Features |
tings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on ceramic board. (25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm2 ) Note 2: Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 )
Note:
1: Gate 2: Source 3: Drain UFM JEDEC JEITA TOSHIBA ― ― 2-2U1A
Weight: 6.6 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic Drain-Source breakdown voltage ... |
Document |
SSM3J108TU Data Sheet
PDF 175.98KB |
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