MRF19030SR3 |
Part Number | MRF19030SR3 |
Manufacturer | Motorola |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19030/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN an... |
Features |
eel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
MRF19030R3 MRF19030SR3
2.0 GHz, 30 W, 26 V LATERAL N –CHANNEL RF POWER MOSFETs CASE 465E –03, STYLE 1 NI –400 MRF19030R3 CASE 465F –03, STYLE 1 NI –400S MRF19030SR3 MAXIMUM RATINGS Rating Drain –Source Voltage Gate –Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 –0.5, +15 83.3 0.48 –65 to +200 200 Unit Vdc Vdc Watts W/°C °C °C ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Mini... |
Document |
MRF19030SR3 Data Sheet
PDF 425.62KB |
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