MRF19030LSR3 |
Part Number | MRF19030LSR3 |
Manufacturer | Motorola |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF19030/D The RF MOSFET Line RF Power Field Effect Transistors Designed for class AB PCN and PCS base s... |
Features |
nal Impedance Parameters • Low Gold Plating Thickness on Leads, 40µ″ Nominal. • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel. MRF19030LR3 MRF19030LSR3 2.0 GHz, 30 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs Freescale Semiconductor, Inc... CASE 465E - 04, STYLE 1 NI - 400 MRF19030LR3 CASE 465F - 04, STYLE 1 NI - 400S MRF19030LSR3 MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 - 0.5, +15 83.3 0.48 - 65 t... |
Document |
MRF19030LSR3 Data Sheet
PDF 630.53KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MRF19030LR3 |
Motorola |
The RF MOSFET Line RF Power Field Effect Transistors | |
2 | MRF19030R3 |
Motorola |
RF POWER FIELD EFFECT TRANSISTORS | |
3 | MRF19030SR3 |
Motorola |
RF POWER FIELD EFFECT TRANSISTORS | |
4 | MRF19045LR3 |
Motorola |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |
5 | MRF19045LSR3 |
Motorola |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |
6 | MRF19045R3 |
Motorola |
RF POWER FIELD EFFECT TRANSISTORS |