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LE28DW1621T |
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| Part Number | LE28DW1621T |
| Manufacturer | Sanyo Semicon Device |
| Description | The LE28DW1621T consists of two memory banks, Bank1 is a 256K x 16 bits or 512K x 8 sector mode flash EEPROM and Bank2 is a 768K x 16 bits or 1536K x 8 sector mode flash EEPROM, manufactured with SANY... |
| Features |
1
Sp ec ifi ca tio ns
• • • • • • • • • • Single 3.0-Volt Read and Write Operations • Separate Memory Banks by Address Space – Bank1: 4Mbit (256K x 16 / 512K x 8) Flash – Bank2: 12Mbit (768K x 16 / 1536K x 8) Flash – Simultaneous Read and Write Capability Read Access Time – 80 ns Latched Address and Data End of Write Detection – Toggle Bit / Data # Polling / RY/BY# Write Protection by WP# pin Erase Verify Mode Flash Bank: Two Small Erase Element Sizes – 1K Words per Sector or 32K Words per Block – Erase either element before Word Program CMOS I/O Compatibility Packages Available – 48-Pin ... |
| Document |
 LE28DW1621T Data Sheet
PDF 347.39KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | LE28DW1621T-80T |
Sanyo Semicon Device |
16 Megabit FlashBank Memory |
|
| 2 | LE28DW3212AT-80B |
Sanyo |
32 Megabit FlashBank Memory |
|
| 3 | LE28DW8102T |
Sanyo |
8 Megabit FlashBank Memory |
|
| 4 | LE28C1001M |
Sanyo Semicon Device |
1MEG (131072 words x 8 bits) Flash Memory |
|
| 5 | LE28C1001T |
Sanyo Semicon Device |
1MEG (131072 words x 8 bits) Flash Memory |
|
| 6 | LE28C1001T-12 |
Sanyo Semicon Device |
1MEG (131072 words x 8 bits) Flash Memory |
|
Desde 2024. D4U Semiconductor.
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