LE28CV1001T-15 |
Part Number | LE28CV1001T-15 |
Manufacturer | Sanyo Semicon Device |
Description | Ordering number : EN*5409 CMOS LSI LE28CV1001M, T-12/15 1MEG (131072 words × 8 bits) Flash Memory Overview The LE28CV1001M, T Series ICs are 1 MEG flash memory products that feature a 131072-word ×... |
Features |
• Highly reliable 2-layer polysilicon CMOS flash EEPROM process • Read and write operations using a 5 V single-voltage power supply • Fast access time: 120 and 150 ns • Low power dissipation — Operating current (read): 12 mA (maximum) — Standby current: 15 µA (maximum) • Highly reliable read/write —Erase/write cycles: 104/103 cycles —Data retention time: 10 years • Address and data latches • Fast page rewrite operation — 128 bytes per page — Byte/page rewrite time: 5 ms (typical) — Chip rewrite time: 5 s (typical) • Automatic rewriting using internally generated Vpp • Rewrite complete detectio... |
Document |
LE28CV1001T-15 Data Sheet
PDF 276.77KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | LE28CV1001T-12 |
Sanyo Semicon Device |
1MEG (131072 words x 8 bits) Flash Memory | |
2 | LE28CV1001T |
Sanyo Semicon Device |
1MEG (131072 words x 8 bits) Flash Memory | |
3 | LE28CV1001M |
Sanyo Semicon Device |
1MEG (131072 words x 8 bits) Flash Memory | |
4 | LE28C1001M |
Sanyo Semicon Device |
1MEG (131072 words x 8 bits) Flash Memory | |
5 | LE28C1001T |
Sanyo Semicon Device |
1MEG (131072 words x 8 bits) Flash Memory | |
6 | LE28C1001T-12 |
Sanyo Semicon Device |
1MEG (131072 words x 8 bits) Flash Memory |