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MS1051 |
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| Part Number | MS1051 |
| Manufacturer | Advanced Power Technology |
| Description | The MS1051 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes state-of-the-art diffused emitter ballasting to achieve extreme r... |
| Features |
• • • • • • • 30 MHz 12.5 VOLTS POUT = 100 WATTS GPE = 12.0 dB MINIMUM IMD = –30 dBc GOLD METALLIZATION COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1051 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes state-of-the-art diffused emitter ballasting to achieve extreme ruggedness under severe operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCBO VCEO VEBO IC PDISS TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Tempe... |
| Document |
 MS1051 Data Sheet
PDF 123.90KB |
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Desde 2024. D4U Semiconductor.
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